Title :
4.2–4.8 GHz CMOS variable gain LNA for Chinese UWB application
Author :
Chen, Fei-Hua ; Lin, Shui-Yang ; Li, Ling-Yun ; Sun, Xiao-Wei
Author_Institution :
Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai, China
Abstract :
The CMOS variable gain low noise amplifier (LNA) presented in this paper is designed for frequency band 4.2-4.8 GHz ultra-wideband (UWB) application specified in China. Wideband input matching with low noise performance co-design method is shown. A three-bit digital programmable gain control circuit is exploited to achieve variable gain. Fabricated with 0.13-μm RF CMOS process, the die size with ESD-pads is 0.9 mm2. Drawn 18 mA from 1.2 V DC supply, the LNA exhibits 2.3 dB minimum noise figure, S(1,1) less than -9 dB and S(2,2) less than -10 dB. Maximum and minimum power gain are 28 dB and 16 dB respectively, about 4 dB/step with four gain modes in all. Input 1 dB compression point is -10 dBm and input third order intercept point (IIP3) is -2 dBm.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; low noise amplifiers; programmable circuits; ultra wideband technology; wideband amplifiers; CMOS variable gain LNA; Chinese UWB LNA; ESD pads; RF CMOS process; compression point; current 18 mA; frequency 4.2 GHz to 4.8 GHz; gain 16 dB; gain 28 dB; input third order intercept point; low noise performance co-design method; minimum noise figure; noise figure 2.3 dB; power gain; size 0.13 mum; three-bit digital programmable gain control circuit; ultrawideband low noise amplifier; voltage 1.2 V; wideband input matching; Broadband amplifiers; CMOS process; Circuit noise; Gain control; Impedance matching; Low-noise amplifiers; Noise figure; Radio frequency; Radiofrequency amplifiers; Ultra wideband technology;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
DOI :
10.1109/ICMMT.2010.5524808
