DocumentCode :
3228475
Title :
Development of Plasma-Damage Free Neutral Beam Sputtering System; High Performance Indium Tin Oxide Films at Room Temperature with Application to Top Emmission OLED
Author :
Jang, Jin-Nyoung ; Lee, YouJong ; Kim, JooHyoung ; Yang, Ie-Hong ; Oh, Kyoung Suk ; Yoo, Suk Jae ; Kim, Daechul ; Lee, Bonju ; Choi, Soung Woong ; Park, Young Chun ; Hong, MunPyo
Author_Institution :
Dept. of Display & Semicond. Phys., Korea Univ., Chungnam
fYear :
2008
fDate :
21-24 Jan. 2008
Firstpage :
1
Lastpage :
5
Abstract :
A neutral beam system has been developed to produce hyperthermal neutral beams (HNB) sputtering system. ITO thin film with good performance has been developed by the HNB sputtering system at the room temperature. The optimized conditions as neutral beam acceleration bias of -30 V and In & Sn composition ratio of 99:01 gives lower resistivity as 4.22 times 10-4 Omega-cm and higher transmittance over 90% near wavelength of 550 nm. The room temperature-processed ITO films applied top electrode of OLED without plasma related damage.
Keywords :
indium compounds; organic light emitting diodes; sputtering; OLED; high performance indium tin oxide films; hyperthermal neutral beams; neutral beam acceleration; organic light emitting diodes; plasma-damage free neutral beam sputtering system; Acceleration; Conductivity; Electrodes; Hyperthermia; Indium tin oxide; Organic light emitting diodes; Particle beams; Plasma applications; Plasma temperature; Sputtering; Damage Free; HNB(Hyperthermal Neutral Beam); ITO; OLED; Room Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Flexible Electronics and Displays Conference and Exhibition, 2008
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2053-7
Electronic_ISBN :
978-1-4244-2054-4
Type :
conf
DOI :
10.1109/FEDC.2008.4483884
Filename :
4483884
Link To Document :
بازگشت