DocumentCode :
3228512
Title :
Ferro- and piezoelectric properties of (Bi3.25Nd0.75)Ti3O12 nanoplates epitaxially grown on Nb:TiO2(101) substrates by sputtering
Author :
Kobune, Masafumi ; Tamura, Akihiro ; Imagawa, Kazuki ; Kishimoto, Ryo ; Nishioka, Hiroshi ; Nakashima, Seiji ; Fujisawa, Hironori ; Shimizu, Masaru ; Yamaguchi, Hideshi ; Honda, Koichiro
Author_Institution :
Grad. Sch. of Eng., Univ. of Hyogo, Himeji, Japan
fYear :
2011
fDate :
24-27 July 2011
Firstpage :
1
Lastpage :
4
Abstract :
Epitaxially a- and b-axis-oriented (Bi3.25Nd0.75)Ti3O12 (BNT-0.75) films and nanoplates have been fabricated on four Nb:TiO2(101) substrates with 0-0.79 mass% Nb by high-temperature sputtering. It is shown from piezoresponse scanning force microscopy (PFM) measurements that the effective piezoelectric coefficients (d33) at room temperature derived from the two linear gradients for the asymmetric displacement-voltage hysteresis loop are 11-13 pm/V.
Keywords :
bismuth compounds; dielectric hysteresis; dielectric polarisation; epitaxial growth; ferroelectric materials; ferroelectric thin films; nanofabrication; nanostructured materials; neodymium compounds; piezoelectric thin films; piezoelectricity; scanning electron microscopy; sputter deposition; (Bi3.25Nd0.75)Ti3O12; TiO2:Nb; asymmetric displacement-voltage hysteresis loop; b-axis oriented films; effective piezoelectric coefficients; epitaxial growth; ferroelectric properties; high-temperature sputtering; nanoplates; piezoelectric properties; piezoresponse scanning force microscopy; remanent polarization; temperature 293 K to 298 K; Crystals; Films; Hysteresis; Microscopy; Niobium; Sputtering; Substrates; effective d33; nanoplate; piezoelectric property; sputtering; ultrasonic transducer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics (ISAF/PFM), 2011 International Symposium on and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4577-1162-6
Electronic_ISBN :
978-1-4577-1161-9
Type :
conf
DOI :
10.1109/ISAF.2011.6014115
Filename :
6014115
Link To Document :
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