Title :
GaInP/AlGaInP metal clad ridge waveguide visible laser diodes with CH4/H2/Ar reactive ion etched mesa stripes
Author :
Kim, T.K. ; Kim, T. ; Oh, M.S. ; Lim, G.G. ; Kim, J.-Y. ; Kim, T.I.
Author_Institution :
Mater. & Devices Res. Center, Samsung Adv. Inst. of Technol., Suwon, South Korea
fDate :
30 Oct-2 Nov 1995
Abstract :
GaInP/AlGaInP metal clad ridge waveguide visible laser diodes with dry etched stripes were fabricated. A symmetric mesa shapes was obtained by reactive ion etching using a CH4/H2/Ar gas mixture. A very low threshold current of 25.4 mA and a symmetric optical field distribution were obtained
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; optical fabrication; quantum well lasers; ridge waveguides; sputter etching; vapour phase epitaxial growth; waveguide lasers; 25.4 mA; GaInP-AlGaInP; GaInP/AlGaInP; H2-Ar; dry etched stripes; fabrication; laser diodes; low threshold current; metal clad ridge waveguide visible laser diodes; methane/H2/Ar reactive ion etched mesa stripes; reactive ion etching; symmetric mesa shapes; symmetric optical field distribution; Argon; Chemical lasers; Diode lasers; Dry etching; Optical recording; Optical waveguides; Particle beam optics; Shape; Threshold current; Wet etching;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484644
