DocumentCode :
3228548
Title :
Energy harvesting using nano antenna array
Author :
Bareiss, Mario ; Hochmeister, Andreas ; Jegert, Gunther ; Koblmüller, Gregor ; Zschieschang, Ute ; Klauk, Hagen ; Fabel, Bernhard ; Scarpa, Giuseppe ; Porod, Wolfgang ; Lugli, Paolo
Author_Institution :
Inst. for Nanoelectron., Tech. Univ. Munchen, Munich, Germany
fYear :
2011
fDate :
15-18 Aug. 2011
Firstpage :
218
Lastpage :
221
Abstract :
Nano antenna arrays are excellent devices for infrared detection (terahertz radiation). We present our latest results on the production of nano antennas fabricated in a nano transfer printing process. The molecular beam epitaxy (MBE) technique allows the growth of AlGaAs/GaAs-stamps which are used to fabricate nano antennas with a high aspect ratio of 104. Additionally, Si-stamps have been manufactured via electron-beam lithography in order to produce dense arrays of over 10 million dipole nano antennas. These dipole antennas have a width of 60 nm and can be trimmed to any length to be sensitive for a desired wavelength in the infrared regime. For rectifying THz radiation, metal-oxide-metal (MOM) tunneling diodes have been printed having an ultrathin dielectric. The transfer yield is almost hundred per cent and electrical measurements of direct and Fowler-Nordheim tunneling confirms the reliability of the printed diodes. A concept of implementing MBE-fabricated MOM diodes having spatial dimensions in the nanometer range in nano antenna arrays is demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; dipole antenna arrays; electron beam lithography; energy harvesting; gallium arsenide; infrared detectors; molecular beam epitaxial growth; nanofabrication; printing; reliability; submillimetre wave antennas; submillimetre wave detectors; submillimetre wave diodes; terahertz wave detectors; tunnelling; AlGaAs-GaAs; Fowler-Nordheim tunneling; MBE technique; MOM tunneling diode; THz radiation; dipole nanoantenna array; electron-beam lithography; energy harvesting; infrared detection; metal-oxide-metal tunneling diode; molecular beam epitaxy technique; nanofabrication; nanotransfer printing processing; printed diode reliability; size 60 nm; terahertz radiation; ultrathin dielectric; Metals; Moment methods; Printing; Silicon; Substrates; Surface treatment; Tunneling; Infrared detection; MOM tunneling diodes; nano antenna arrays; nano transfer printing; terahertz radiation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location :
Portland, OR
ISSN :
1944-9399
Print_ISBN :
978-1-4577-1514-3
Electronic_ISBN :
1944-9399
Type :
conf
DOI :
10.1109/NANO.2011.6144516
Filename :
6144516
Link To Document :
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