Title :
The simultaneous effects of the hydrostatic pressure and magnetic field on the donor confined in inhomogeneous quantum dots
Author :
El Haouari, M. ; Feddi, E. ; Oukerroum, A. ; Assaid, And E.
Author_Institution :
Groupe d´Optoelectron. des Boites Quantiques des Semicond., Univ. Mohamed V, Rabat, Morocco
Abstract :
In the present work, we studied the effects of hydrostatic pressure and the magnetic field on the binding energy and susceptibility diamagnetic of the shallow donor confined in inhomogeneous quantum dots GaAlAs-GaAs-GaAlAs. Our calculations are performed using a variational approach within the mass effective approximation. We describe the quantum confinement by an infinite deep potential. The ground state energy and the diamagnetic susceptibility of the donor are computed as function of hydrostatic pressure, dot size, donor position and the strength of the magnetic field. The results show the ground state energy, increases with pressure and magnetic field for any ratio, inner on outer radius. The absolute value of diamagnetic susceptibility decreases with increasing pressure and magnetic field. Hydrostatic pressure and magnetic field corresponds an additional confinement, their effects are decerned at lowest confinement.
Keywords :
III-V semiconductors; aluminium compounds; binding energy; diamagnetic materials; effective mass; gallium arsenide; ground states; magnetic susceptibility; semiconductor quantum dots; variational techniques; GaAlAs-GaAs-GaAlAs; binding energy; diamagnetic susceptibility; ground state energy; hydrostatic pressure; infinite deep potential; inhomogeneous quantum dots; magnetic field; mass effective approximation; shallow donor; variational approach; Gallium arsenide; Gallium nitride; Impurities; Magnetic confinement; Magnetic fields; Magnetic susceptibility; Nonhomogeneous media; Diamagnetic susceptibility; Ground state energy; Hydrostatic pressure; Magnetic field; Quantum dots;
Conference_Titel :
Electrical and Information Technologies (ICEIT), 2015 International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4799-7478-8
DOI :
10.1109/EITech.2015.7162946