Title :
Fabrication of (K,Na)NbO3 thin films on Si substrate by pulsed laser deposition
Author :
Fukada, Masaki ; Yamazoe, Seiji ; Wada, Takahiro
Author_Institution :
Dept. of Mater. Chem., Ryukoku Univ., Otsu, Japan
Abstract :
We fabricated (Na,K)NbO3 (NKN) thin films on (111)Pt/Ti/SiO2/(001)Si substrates at substrate temperature of 750°C in O2 gas pressure of 200 mTorr by pulsed laser deposition (PLD). The ferroelectric properties of the NKN thin films were improved by the insertion of a thin NKN or NN buffer layer. These buffer layers had an influence on composition control of the NKN films. The remanent polarization and the coercive electric field of the NKN films with the NN buffer layer were 15 μC/cm2 and 40 kV/cm, respectively.
Keywords :
buffer layers; dielectric polarisation; ferroelectric coercive field; ferroelectric thin films; potassium compounds; pulsed laser deposition; sodium compounds; (KNa)NbO3; Si; buffer layer; coercive electric field; ferroelectric properties; pressure 200 mtorr; pulsed laser deposition; remanent polarization; temperature 750 degC; thin films; Buffer layers; Ceramics; Lead; Pulsed laser deposition; Substrates; Surface treatment; (Na,K)NbO3; buffer layer; ferroelectric; lead-free; pulsed laser deposition; thin film;
Conference_Titel :
Applications of Ferroelectrics (ISAF/PFM), 2011 International Symposium on and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4577-1162-6
Electronic_ISBN :
978-1-4577-1161-9
DOI :
10.1109/ISAF.2011.6014121
