Title :
A broadband low noise amplifier MMIC in 0.15μm GaAs pHEMT technology
Author :
Chen, Bo ; Huang, Wen ; Yang, Guang ; Guo, Yunchuan
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
This paper describes the design and simulated performance of 18-40GHz MMIC low noise amplifier (LNA). A three stages amplifier has been designed and developed using 0.15um gate length GaAs/InGaAs/AlGaAs pHEMT technology. Self-biased and resistive matching technologies have been used to enhance the electrical specifications like return loss and gain flatness. The simulated data shows better than 3.1 dB of noise figure with an associated gain of more than 17.5 dB over the frequency band of 18-40 GHz. Over the range of 19-40 GHz, it could achieve better than 2 dB of noise figure with an associated gain of 22±2dB.
Keywords :
III-V semiconductors; MMIC amplifiers; gallium arsenide; indium compounds; low noise amplifiers; power HEMT; GaAs-InGaAs-AlGaAs; MMIC low noise amplifier; broadband low noise amplifier; electrical specification; frequency 18 GHz to 40 GHz; pHEMT technology; resistive matching technology; self-biased matching technology; size 0.15 mum; Broadband amplifiers; Circuit noise; Circuit topology; Frequency; Gallium arsenide; Impedance matching; Low-noise amplifiers; MMICs; Noise figure; PHEMTs;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
DOI :
10.1109/ICMMT.2010.5524823
