Title :
A New SrBi4Ti4O15/CaBi4Ti4O15 thin film capacitor for excellent electric stability
Author :
Nomura, Shuhei ; Yamashita, Kaoru ; Noda, Minoru ; Uchida, Hiroshi ; Funakubo, Hiroshi
Author_Institution :
Grad. Sch. of Sci. & Technol., Kyoto Inst. of Technol., Kyoto, Japan
Abstract :
SrBi4Ti4O15 (SBTi) and CaBi4Ti4O15 (CBTi) dielectric films of Bismuth Layered Structure Dielectrics (BLSD) are prepared on Pt film for constructing stacked-type dielectric capacitors. Compared to perovskite barium titanate family of (Ba,Sr)TiO3 (BST) case, it is observed that the SBTi film keeps a low leakage of 10-7 A/cm2 at 250 kV/cm, which is smaller by an order of magnitude than the BST film, even with thinner thickness in the SBTi film. This indicates that the SBTi film is effective for applying to high permittivity capacitor with the barium perovskite oxide family.
Keywords :
bismuth compounds; calcium compounds; circuit stability; dielectric thin films; platinum; strontium compounds; thin film capacitors; titanium compounds; Pt; SrBi4Ti4O15-CaBi4Ti4O15; barium perovskite oxide; bismuth layered structure dielectrics; dielectric films; electric stability; permittivity capacitor; perovskite barium titanate; stacked-type dielectric capacitors; thin film capacitor; Bismuth; Capacitors; Crystals; Films; Temperature dependence; Bismuth Layered Structure Dielectrics (BLSD); electric stability; environmentally-resistant; film capacitor;
Conference_Titel :
Applications of Ferroelectrics (ISAF/PFM), 2011 International Symposium on and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4577-1162-6
Electronic_ISBN :
978-1-4577-1161-9
DOI :
10.1109/ISAF.2011.6014132
