DocumentCode :
3228885
Title :
Electrical reliability and breakdown mechanisms in single-walled carbon nanotubes
Author :
Strus, Mark C. ; Keller, Robert R. ; Barbosa, N.
Author_Institution :
Mater. Reliability Div., Nat. Inst. of Stand. & Technol., Boulder, CO, USA
fYear :
2011
fDate :
15-18 Aug. 2011
Firstpage :
715
Lastpage :
719
Abstract :
We show that single-walled carbon nanotubes can carry current densities >;1 MA/cm2 for several hours but degrade over time at rates that depend on initial input power. Above a current threshold maximum, we observe large scale physical migration at the CNT-Au electrode interface, which results in Au voids as large as 300 nm in diameter and nearby mounds 3× as tall as the original 50 nm structure. We suggest that the likely mechanism for this void and mound growth is either localized melting, thermomigration, electromigration, or some combination of these. We also show two unique end-of-life breakdown mechanisms for CNTs, a classical fracture via resistive breakdown, and a physically intact but nonconducting failure mode.
Keywords :
carbon nanotubes; current density; electrodes; electromigration; fracture; gold; melting; C-Au; breakdown mechanism; classical fracture; current density; current threshold maximum; electrical reliability; electrode interface; electromigration; initial input power; localized melting; nonconducting failure mode; physical migration; resistive breakdown; single-walled carbon nanotubes; size 300 nm; size 50 nm; thermomigration; voids; Carbon nanotubes; Degradation; Electrodes; Electromigration; Gold; Reliability; Scanning electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location :
Portland, OR
ISSN :
1944-9399
Print_ISBN :
978-1-4577-1514-3
Electronic_ISBN :
1944-9399
Type :
conf
DOI :
10.1109/NANO.2011.6144532
Filename :
6144532
Link To Document :
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