High power terahertz radiation at 1 kHz repetition rate

Author

Budiarto, E. ; Jeong, S. ; Son, J. ; Margolies, J. ; Boker, J.

Author_Institution

California Univ., Berkeley, CA, USA

Volume

2

fYear

1995

fDate

30 Oct-2 Nov 1995

Firstpage

220

Abstract

In this paper we report a high power THz transmitter operating at 1 kHz repetition rate. This kHz repetition rate gives a high signal-to-noise ratio, which is essential for quantitative study of high-field semiconductor physics. The transmitter is an undoped GaAs wafer with aluminum electrodes separated by a 3 cm gap. The bias to the antenna is provided by a high voltage pulse generator producing 2 μs pulses with a peak voltage of up to 40 kV. The THz antenna is illuminated at normal incidence by 150 fs, 800 nm pulses from a Clark-MXR Ti:Sapphire regenerative laser amplifier system running at 1 kHz

Keywords

III-V semiconductors; gallium arsenide; microwave antennas; pulse generators; radio transmitters; solid lasers; submillimetre wave devices; 150 fs; 2 mus; 3 cm; 40 kV; 800 nm; Clark-MXR Ti:Sapphire regenerative laser amplifier system; GaAs; THz antenna; aluminum electrodes; high power THz transmitter; high power terahertz radiation; high signal-to-noise ratio; high voltage pulse generator; high-field semiconductor physics; kHz repetition rate; peak voltage; submm wave generation; undoped GaAs wafer; Aluminum; Electrodes; Gallium arsenide; Optical pulses; Physics; Pulse amplifiers; Pulse generation; Signal to noise ratio; Transmitters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484674

Filename

484674