Notice of RetractionStudy of electrical and micro-structural properties of nano-scale ultra thin gate dielectric stacks in a MOS Device using Pulse Laser Deposition technique

Notice of Retraction

After careful and considered review of the content of this paper by a duly constituted expert committee, this paper has been found to be in violation of IEEE´s Publication Principles.

We hereby retract the content of this paper. Reasonable effort should be made to remove all past references to this paper.

The presenting author of this paper has the option to appeal this decision by contacting TPII@ieee.org.

The electrical properties of La₂O₃HfO₂ gate dielectric stacks as a MOS structure deposited using Pulse Laser Deposition technique under optimized pressure, substrate temperature and numbers of shots in oxygen ambient gas were investigated. The film thickness and microstructure is examined using Ellipsometer, AFM to see the effect of operating pressure, number of PLD shots and substrate temperature on the film. The electrical I-V, C-V characteristics of the dielectric film was investigated employing Al-HfO₂-Si and Al-HfO₂La₂O₃-Si MOS capacitor structure. The gate stacks thus deposited were studied to get best electrical results like breakdown voltage, oxide charges and leakage current as a MOS device under different sets of environments. The flat-band voltage (V_fb) and oxide-charge density (Q_ox) were extracted from the high-frequency (1MH_z) C-V curve.