An improved design method for asymmetric RF MEMS tunable filter utilizing admittance matrix

Author

Tu, Cheng ; Bao, Jingfu ; Du, Yijia ; Wu, Wenchang

Author_Institution

Dept. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2010

fDate

8-11 May 2010

Firstpage

1766

Lastpage

1769

Abstract

This paper presents a low loss 8-10GHz tunable filter using high-Q RF MEMS capacitance networks. An improved design method, which utilizes admittance matrix of the filter network, is proposed and discussed. Detail design equations for the tuning elements and coupled microstrip λ/2 resonators are given. Compared to previous method, this method is improved since it is applicable to not only symmetric filter network but also asymmetric ones. To verify this method, an 8-10GHz tunable filter is designed and simulated. The simulation results obtained by 3D electromagnetic simulation tool are in good agreement with the results calculated by the proposed method.

Keywords

circuit tuning; electric admittance; micromechanical devices; microstrip resonators; radiofrequency filters; 3D electromagnetic simulation tool; admittance matrix; asymmetric RF MEMS tunable filter; coupled microstrip resonator; frequency 8 GHz to 10 GHz; high-Q RF MEMS capacitance network; symmetric filter network; tuning element; Admittance; Capacitance; Capacitors; Design methodology; Frequency; Radiofrequency microelectromechanical systems; Resonator filters; Symmetric matrices; Transmission line matrix methods; Tunable circuits and devices; RF-MEMS; admittance matrix; capacitive loading; tunable filter;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5705-2

Type

conf

DOI

10.1109/ICMMT.2010.5524840

Filename

5524840