DocumentCode :
3229184
Title :
High resolution analysis of self assembled Cu nanowires on vicinal Si(001)
Author :
Ng, Poh-Keong ; Fisher, Brandon ; Low, Ke-Bin ; Joshi-Imre, Alexandra ; Bode, Matthias ; Lilley, Carmen M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Chicago, Chicago, IL, USA
fYear :
2011
fDate :
15-18 Aug. 2011
Firstpage :
1114
Lastpage :
1117
Abstract :
This paper presents material properties of self-assembled Cu nanowires that were fabricated in the vacuum e-beam evaporation method. Diffraction patterns obtained from the Transmission Electron Microscopy (TEM) indicate that the Cu nanowires have two slightly different properties: single crystalline structures and polycrystalline structures with low angle grain boundary. Focused ion beam (FIB) was also used to observe the nanowires cross sectional shape.
Keywords :
copper; crystal structure; evaporation; focused ion beam technology; grain boundaries; nanowires; self-assembly; silicon; transmission electron microscopy; Cu; Si; diffraction patterns; focused ion beam; low angle grain boundary; material properties; polycrystalline structures; self assembled Cu nanowires; single crystalline structures; transmission electron microscopy; vacuum e-beam evaporation; vicinal Si(001); Copper; Nanowires; Self-assembly; Silicon; Substrates; Wires; Cu nanowires; FIB; Self assembly; TEM; diffraction pattern;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location :
Portland, OR
ISSN :
1944-9399
Print_ISBN :
978-1-4577-1514-3
Electronic_ISBN :
1944-9399
Type :
conf
DOI :
10.1109/NANO.2011.6144547
Filename :
6144547
Link To Document :
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