High resolution analysis of self assembled Cu nanowires on vicinal Si(001)

Author

Ng, Poh-Keong ; Fisher, Brandon ; Low, Ke-Bin ; Joshi-Imre, Alexandra ; Bode, Matthias ; Lilley, Carmen M.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois at Chicago, Chicago, IL, USA

fYear

2011

fDate

15-18 Aug. 2011

Firstpage

1114

Lastpage

1117

Abstract

This paper presents material properties of self-assembled Cu nanowires that were fabricated in the vacuum e-beam evaporation method. Diffraction patterns obtained from the Transmission Electron Microscopy (TEM) indicate that the Cu nanowires have two slightly different properties: single crystalline structures and polycrystalline structures with low angle grain boundary. Focused ion beam (FIB) was also used to observe the nanowires cross sectional shape.

Keywords

copper; crystal structure; evaporation; focused ion beam technology; grain boundaries; nanowires; self-assembly; silicon; transmission electron microscopy; Cu; Si; diffraction patterns; focused ion beam; low angle grain boundary; material properties; polycrystalline structures; self assembled Cu nanowires; single crystalline structures; transmission electron microscopy; vacuum e-beam evaporation; vicinal Si(001); Copper; Nanowires; Self-assembly; Silicon; Substrates; Wires; Cu nanowires; FIB; Self assembly; TEM; diffraction pattern;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on

Conference_Location

Portland, OR

ISSN

1944-9399

Print_ISBN

978-1-4577-1514-3

Electronic_ISBN

1944-9399

Type

conf

DOI

10.1109/NANO.2011.6144547

Filename

6144547