Title :
An Ultra-Low-Power 9.8 GHz Crystal-Less UWB Transceiver With Digital Baseband Integrated in 0.18 µm BiCMOS
Author :
Kuo-Ken Huang ; Brown, J.K. ; Ansari, Elnaz ; Rogel, R.R. ; Yoonmyung Lee ; Hyeongseok Kim ; Wentzloff, David D.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
This paper presents a fully-integrated IR-UWB radio, designed to operate within the limits of mm-scale micro-battery for cubic-mm sensor nodes. It includes an RF front-end, battery current limiter, baseband modem with I2C interface, and temperature-compensated relaxation oscillator for frequency generation without a crystal. The peak current draw from a modern mm-scale battery must be <;100 μA, below a radio´s active power consumption. Thus, duty-cycling the radio only at the packet level is not an option, and so this IR-UWB radio includes an integrated modem which duty-cycles the RF front-end at the bit-level. A current limiter protects the battery from over-current conditions, and the radio operates from on-chip storage capacitance that is recharged between bits. The radio operates at 30 kb/s with a center frequency of 9.8 GHz. It consumes 291 μW average power in transmit mode while broadcasting 0.1 dBm pulses, and 306 μW in receive mode with a sensitivity of -77 dBm. The area of the radio is 2.73 mm<;sup>2<;/sup>.
Keywords :
BiCMOS integrated circuits; current limiters; low-power electronics; microwave integrated circuits; modems; radio transceivers; BiCMOS; IR-UWB radio; RF front-end; baseband modem; battery current limiter; bit rate 30 kbit/s; current 100 muA; digital baseband; frequency 9.8 GHz; frequency generation; on-chip storage capacitance; power 291 muW; power 306 muW; power consumption; sensor nodes; size 0.18 mum; temperature-compensated relaxation oscillator; ultra-low-power crystal-less UWB transceiver; Baseband; Batteries; Capacitors; Oscillators; Radio frequency; Resistors; Wireless sensor networks; CMOS; I2C; UWB; radio transceivers; wireless sensor networks;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2013.2281523