Self assembled Cu nanowires on vicinal Si(001) by the E-beam evaporation method

Author

Ng, Poh-Keong ; Fisher, Brandon ; Bode, Matthias ; Lilley, Carmen M.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois at Chicago, Chicago, IL, USA

fYear

2011

fDate

15-18 Aug. 2011

Firstpage

150

Lastpage

154

Abstract

This paper describes an experimental procedure for growing self assembled Cu nanowires on a 4° miscut Si(001) substrate with and without the native oxide layer by the e-beam evaporation method. The physical characteristics of the Cu nanowires were observed using an in situ and ex situ scanning electron microscope (SEM). The results are compared with Ag nanowires that were fabricated with the same procedure.

Keywords

copper; electron beam deposition; nanofabrication; nanowires; scanning electron microscopy; self-assembly; Cu; E-beam evaporation method; SEM; Si; ex situ scanning electron microscopy; in situ scanning electron microscopy; miscut Si(001) substrate; native oxide layer; physical characteristics; self assembled nanowires; vicinal Si(001); Copper; Nanowires; Physics; Scanning electron microscopy; Silicon; Substrates; Self assembled Cu nanowires; e-beam evaporation method; focus-ion-beam (FIB); native oxide; scanning electron microscope (SEM);

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on

Conference_Location

Portland, OR

ISSN

1944-9399

Print_ISBN

978-1-4577-1514-3

Electronic_ISBN

1944-9399

Type

conf

DOI

10.1109/NANO.2011.6144548

Filename

6144548