DocumentCode :
3229210
Title :
Modeling and design of 5-bit X-band RF MEMS distributed phase shifter
Author :
Du, Yijia ; Bao, Jingfu ; Wu, Wenchang ; Tu, Cheng ; Mu, Pengfei
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2010
fDate :
8-11 May 2010
Firstpage :
1770
Lastpage :
1773
Abstract :
This paper advances the equivalent-circuit model for the unit cell of RF MEMS distributed phase shifter with MAM (Metal-Air-Metal) capacitor, which could predict the performance of the unit cell accurately. Based on the equivalent-circuit model, the dependence on fabrication process of the designed unit cell of RF MEMS distributed phase shifter is reduced very much. The maximum phase deviation of the unit cell is smaller than 0.829°even when fabrication errors reached 13%. The return loss of the unit cell is below -20dB and the worst insertion loss is -0.08dB at 10GHz. The MEMS bridge with elastic bending beam is actuated with actuation voltage 20 V. By adopting a novel topology to diminish coupling of different bits, 5-bit RF MEMS distributed phase shifter results in an average return loss of 13.56 dB, an average insertion loss of 1.49 dB, an average phase deviation of 3.17° and an average relative phase error of 2.24% at 10GHz.
Keywords :
capacitors; equivalent circuits; micromechanical devices; microwave phase shifters; MAM capacitor; MEMS bridge; X-band RF MEMS distributed phase shifter; elastic bending beam; equivalent-circuit model; fabrication process; metal-air-metal capacitor; unit cell design; Bridge circuits; Capacitors; Fabrication; Insertion loss; Micromechanical devices; Phase shifters; Predictive models; Process design; Radiofrequency microelectromechanical systems; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
Type :
conf
DOI :
10.1109/ICMMT.2010.5524842
Filename :
5524842
Link To Document :
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