An ANN Majority Logic Gate (MLG) using Single Electron Nano-Devices

Author

Rehan, Sameh Ebrahim

Author_Institution

Commun. & Electron. Eng. Dept., Mansoura Univ. (MU), Mansoura, Egypt

fYear

2010

fDate

6-9 Dec. 2010

Firstpage

983

Lastpage

986

Abstract

The Single Electron Nano-Devices (SENDs) are attractive candidates for post-CMOS VLSI era mainly due to its very low power consumption. In this paper, the Linear Threshold Gate (LTG) SEND is reviewed. An Artificial Neural Network (ANN) Majority Logic Gate (MLG) with 3 inputs (MLG3) is proposed. The MLGs with different inputs (from 3 to 7) are implemented using LTG and SET inverter SENDs. The detailed parameters for all used devices as well as the corresponding SIMON 2.0 simulation results of these MLGs are included.

Keywords

CMOS logic circuits; VLSI; electronic engineering computing; logic gates; majority logic; nanoelectronics; neural nets; single electron transistors; ANN MLG; LTG inverter SEND; SET inverter SEND; SIMON 2.0 simulation; artificial neural network majority logic gate; linear threshold gate SEND; post-CMOS VLSI; single electron nanodevices; Artificial neural networks; Capacitors; Inverters; Logic gates; Neurons; Simulation; Tunneling; Artificial Neural Network (ANN); Linear Threshold Gate (LTG); Majority Logic Gate (MLG); SIMON 2.0; Single Electron (SE); Single Electron Box (SEB); Single Electron NanoDevices (SENDs); Single Electron Transistor (SET);

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (APCCAS), 2010 IEEE Asia Pacific Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4244-7454-7

Type

conf

DOI

10.1109/APCCAS.2010.5774904

Filename

5774904