• DocumentCode
    3229438
  • Title

    Numerical simulation and analysis of voltage controlling N+-N-P+ model for BJMOSFET´s DC characteristics

  • Author

    Jin, Xiangliang ; Chen, Jie ; Zeng, Yun

  • Author_Institution
    Microelectron. R&D Center, Chinese Acad. of Sci., Beijing, China
  • Volume
    3
  • fYear
    2002
  • fDate
    28-31 Oct. 2002
  • Firstpage
    2075
  • Abstract
    A new power device, the bipolar junction metal-oxide-semi conductor field effect transistors (BJMOSFET), has been proposed. Based on the numerical and analytical method, the voltage controlling N+-N-P+ model for BJMOSFET´s DC characteristics has been obtained. Applying the software package of Mathematic, we have simulated both the voltage transfer and the voltage output characteristic graphs of BJMOSFET. Simulation results indicate that the BJMOSFET has a larger current density about 30-40 % than the power MOSFET under the same operating conditions and structure parameters, only that the threshold voltage increases a little.
  • Keywords
    electronic engineering computing; power MOSFET; power bipolar transistors; semiconductor device models; voltage control; BJMOSFET DC characteristics; Mathematic software package; N+-N-P+ model; bipolar junction metal-oxide-semi conductor field effect transistors; current density; numerical simulation; power device; structure parameters; threshold voltage; voltage control; voltage output; voltage transfer; Conductors; Current density; FETs; MOSFET circuits; Mathematics; Numerical simulation; Power MOSFET; Software packages; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    TENCON '02. Proceedings. 2002 IEEE Region 10 Conference on Computers, Communications, Control and Power Engineering
  • Print_ISBN
    0-7803-7490-8
  • Type

    conf

  • DOI
    10.1109/TENCON.2002.1182751
  • Filename
    1182751
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3229438