Title :
Numerical simulation and analysis of voltage controlling N+-N-P+ model for BJMOSFET´s DC characteristics
Author :
Jin, Xiangliang ; Chen, Jie ; Zeng, Yun
Author_Institution :
Microelectron. R&D Center, Chinese Acad. of Sci., Beijing, China
Abstract :
A new power device, the bipolar junction metal-oxide-semi conductor field effect transistors (BJMOSFET), has been proposed. Based on the numerical and analytical method, the voltage controlling N+-N-P+ model for BJMOSFET´s DC characteristics has been obtained. Applying the software package of Mathematic, we have simulated both the voltage transfer and the voltage output characteristic graphs of BJMOSFET. Simulation results indicate that the BJMOSFET has a larger current density about 30-40 % than the power MOSFET under the same operating conditions and structure parameters, only that the threshold voltage increases a little.
Keywords :
electronic engineering computing; power MOSFET; power bipolar transistors; semiconductor device models; voltage control; BJMOSFET DC characteristics; Mathematic software package; N+-N-P+ model; bipolar junction metal-oxide-semi conductor field effect transistors; current density; numerical simulation; power device; structure parameters; threshold voltage; voltage control; voltage output; voltage transfer; Conductors; Current density; FETs; MOSFET circuits; Mathematics; Numerical simulation; Power MOSFET; Software packages; Threshold voltage; Voltage control;
Conference_Titel :
TENCON '02. Proceedings. 2002 IEEE Region 10 Conference on Computers, Communications, Control and Power Engineering
Print_ISBN :
0-7803-7490-8
DOI :
10.1109/TENCON.2002.1182751
