Title :
Spurious mode suppression in multiple layer HfO2/Simax acoustical mirror structure for ILAW on 15°-YX LiNbO3
Author :
Zhgoon, S. ; Shvetsov, A. ; Bhattacharjee, K.
Author_Institution :
Dept. of Radio Eng. Fundamentals, Moscow Power Eng. Inst., Moscow, Russia
Abstract :
Cavityless wafer level packaging and TCF improvement are possible with isolated layer acoustic wave (ILAW) with an acoustical mirror structure. Meanwhile orientations of LiNbO3 with high coupling factor that are needed for wideband SAW filters are known to possess spurious modes in the working frequency range. Several attempts with useful outcome have been published for orientations around 15°-YX LiNbO3, the cut angle was also optimized for reduction of the spurious mode coupling factor. This paper investigates the possibility to use the ILAW supporting structure for suppression of spurious modes by exploiting the difference in propagation properties of the waves with different displacement polarization. The results show that the mirror structure with ILAW that is aimed for cavityless wafer level packaging and TCF improvement can simultaneously be used for suppression of the spurious mode in wideband filters.
Keywords :
hydrogen compounds; lithium compounds; mirrors; surface acoustic wave filters; wafer level packaging; HfO2; ILAW; LiNbO3; Simax acoustical mirror structure; TCF improvement; cavityless wafer level packaging; isolated layer acoustic wave; spurious mode coupling factor; spurious mode suppression; wideband SAW filters; Acoustic waves; Couplings; Electrodes; Hafnium compounds; Lithium niobate; Resonant frequency; HfO2; ILAW; SAW resonator; SiO2; Simax; cavityless wafer-level packaging; finite element modeling; isolated layer acoustic waves; lithium niobate;
Conference_Titel :
Ultrasonics Symposium (IUS), 2011 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4577-1253-1
DOI :
10.1109/ULTSYM.2011.0132