Influences of gain coefficient nonlinearity on the operating characteristics of semiconductor traveling-wave amplifiers

Author

Dai, Zheng ; Michalzik, Rainer ; Unger, Peter ; Ebeling, Karl Joachim

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

Volume

2

fYear

1995

fDate

30 Oct-2 Nov 1995

Firstpage

299

Abstract

Nonlinearity of the material gain coefficient is taken into consideration in a selfconsistent beam-propagation model for InGaAs-GaAs QW semiconductor travelling-wave laser amplifiers. The device gain saturation is analyzed under the nonlinear correction

Keywords

III-V semiconductors; carrier density; gallium arsenide; indium compounds; laser theory; nonlinear optics; quantum well lasers; semiconductor device models; travelling wave amplifiers; waveguide lasers; InGaAs-GaAs QW semiconductor travelling-wave laser amplifiers; device gain saturation; gain coefficient nonlinearity; material gain coefficient; nonlinear correction; operating characteristics; selfconsistent beam-propagation model; semiconductor traveling-wave amplifiers; Gain; Linear approximation; Nonlinear optics; Optical amplifiers; Optical refraction; Optical saturation; Optical variables control; Reflectivity; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484725

Filename

484725