Title :
Influences of gain coefficient nonlinearity on the operating characteristics of semiconductor traveling-wave amplifiers
Author :
Dai, Zheng ; Michalzik, Rainer ; Unger, Peter ; Ebeling, Karl Joachim
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
fDate :
30 Oct-2 Nov 1995
Abstract :
Nonlinearity of the material gain coefficient is taken into consideration in a selfconsistent beam-propagation model for InGaAs-GaAs QW semiconductor travelling-wave laser amplifiers. The device gain saturation is analyzed under the nonlinear correction
Keywords :
III-V semiconductors; carrier density; gallium arsenide; indium compounds; laser theory; nonlinear optics; quantum well lasers; semiconductor device models; travelling wave amplifiers; waveguide lasers; InGaAs-GaAs QW semiconductor travelling-wave laser amplifiers; device gain saturation; gain coefficient nonlinearity; material gain coefficient; nonlinear correction; operating characteristics; selfconsistent beam-propagation model; semiconductor traveling-wave amplifiers; Gain; Linear approximation; Nonlinear optics; Optical amplifiers; Optical refraction; Optical saturation; Optical variables control; Reflectivity; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484725
