Title :
A proposal of broad bandwidth vertical-cavity laser amplifier
Author :
Lim, S.F. ; Chang-Hasnain, C.J.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
fDate :
30 Oct-2 Nov 1995
Abstract :
In this paper, we propose a novel GaAs-AlAs DBR vertical coupled-cavity semiconductor laser amplifier (VCA) structure aimed at providing amplification with desirably broader transmission bandwidths and more square-like transmission spectra at acceptably low gain levels
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; laser mirrors; laser theory; quantum well lasers; surface emitting lasers; GaAs-AlAs; GaAs-AlAs DBR vertical coupled-cavity semiconductor laser amplifier structure; broad bandwidth vertical-cavity laser amplifier; broader transmission bandwidths; low gain levels; square-like transmission spectra; Bandwidth; Couplings; Gain; Gallium arsenide; Mirrors; Optical amplifiers; Optical films; Optical filters; Proposals; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484729
