Title :
Spectral reflectance as a non-destructive SIMOX quality evaluation technique
Author :
Wetteroth, T. ; Wilson, S.R. ; Shin, H. ; Hong, S. ; Theodore, N.D. ; Huang, W.M. ; Racanelli, M.
Author_Institution :
Mater. Res. & Strategic Technol., Motorola Inc., Mesa, AZ, USA
fDate :
30 Sep-3 Oct 1996
Abstract :
Summary form only given. Spectral reflectance analysis versus wavelength can provide quick and valuable, non-destructive, information about the quality of SIMOX wafers prior to device fabrication in addition to thickness information. Advantages of commercial tools include; precision stages for automated patterned wafer measurements, speed, and a variety of spot sizes ranging from as small as 2.7 μm×2.7 μm to as large as 400 μm×300 μm. Use of the technique prior to processing can screen out suspect batches, identifying them for more intensive and destructive investigation. Device measurements were made on material with suspect reflectometry results. Device carrier lifetime and BVdss are reported. In addition, cross section Transmission Electron Micrographs (TEM) were taken to clarify physical attributes
Keywords :
SIMOX; carrier lifetime; integrated circuit manufacture; integrated circuit measurement; optical variables measurement; reflectometry; SIMOX wafers; SOI; Si; automated patterned wafer measurements; carrier lifetime; cross section transmission electron micrographs; nondestructive SIMOX quality evaluation technique; spectral reflectance analysis; thickness information; Charge carrier lifetime; Electrons; Fabrication; Information analysis; Reflectivity; Reflectometry; Size measurement; Spectral analysis; Velocity measurement; Wavelength measurement;
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
Print_ISBN :
0-7803-3315-2
DOI :
10.1109/SOI.1996.552488
