DocumentCode :
3230170
Title :
Characterisation of surface micromachined beams with floating gate transistor
Author :
Figueras, Eduard ; Morata, Marta ; Plaza, Jose Antonio ; Amírola, Jorge ; Rodriguez, Angel ; Cané, Carles
Author_Institution :
Centre Nacional de Microelectron., Univ. Autonoma de Barcelona, Spain
Volume :
4
fYear :
2002
fDate :
5-8 Nov. 2002
Firstpage :
2722
Abstract :
A micromechanical beam structure has been fabricated with surface micromachining of a 2 μm polysilicon layer and includes capacitive electrodes for excitation and floating gate MOS transistors for detection. The device is presented in two possible configuration that we call double gate (DG) or extended gate (EXTG). Preliminary results of the electrical characterisation and mechanical behaviour are presented.
Keywords :
MOSFET; electrodes; micromachining; microsensors; 2 micron; NMOS transistors; Si; bridge sensor structures; cantilever sensor structures; capacitive electrodes; detection; double gate; electrical characterisation; excitation; extended gate; fabrication; floating gate MOS transistors; floating gate transistor; mechanical behaviour; micromechanical beam structure; polysilicon layer; surface micromachined beams; surface micromachining; Bridge circuits; Electrodes; Frequency; MOSFETs; Mechanical sensors; Micromachining; Postal services; Resonance; Sensor phenomena and characterization; Telecommunications;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IECON 02 [Industrial Electronics Society, IEEE 2002 28th Annual Conference of the]
Print_ISBN :
0-7803-7474-6
Type :
conf
DOI :
10.1109/IECON.2002.1182825
Filename :
1182825
Link To Document :
بازگشت