Characterisation of surface micromachined beams with floating gate transistor

Author

Figueras, Eduard ; Morata, Marta ; Plaza, Jose Antonio ; Amírola, Jorge ; Rodriguez, Angel ; Cané, Carles

Author_Institution

Centre Nacional de Microelectron., Univ. Autonoma de Barcelona, Spain

Volume

4

fYear

2002

fDate

5-8 Nov. 2002

Firstpage

2722

Abstract

A micromechanical beam structure has been fabricated with surface micromachining of a 2 μm polysilicon layer and includes capacitive electrodes for excitation and floating gate MOS transistors for detection. The device is presented in two possible configuration that we call double gate (DG) or extended gate (EXTG). Preliminary results of the electrical characterisation and mechanical behaviour are presented.

Keywords

MOSFET; electrodes; micromachining; microsensors; 2 micron; NMOS transistors; Si; bridge sensor structures; cantilever sensor structures; capacitive electrodes; detection; double gate; electrical characterisation; excitation; extended gate; fabrication; floating gate MOS transistors; floating gate transistor; mechanical behaviour; micromechanical beam structure; polysilicon layer; surface micromachined beams; surface micromachining; Bridge circuits; Electrodes; Frequency; MOSFETs; Mechanical sensors; Micromachining; Postal services; Resonance; Sensor phenomena and characterization; Telecommunications;

fLanguage

English

Publisher

ieee

Conference_Titel

IECON 02 [Industrial Electronics Society, IEEE 2002 28th Annual Conference of the]

Print_ISBN

0-7803-7474-6

Type

conf

DOI

10.1109/IECON.2002.1182825

Filename

1182825