Title :
Synthesis and characterization of N- and P- doped tin oxide nanowires
Author :
Tran, Hoang A. ; Rananavare, Shankar B.
Author_Institution :
Dept. of Chem., Portland State Univ., Portland, OR, USA
Abstract :
Bulk-scale synthetic methods for preparing doped tin oxide (SnO2) nanowires (NWs) are presented. n-and p-doping is achieved through insertion of Antimony and Lithium in tin oxide lattice, respectively. We also present a comparison of the structural and optical properties of SnO2 nanoparticles (NPs), and SnO2 NWs. Both n-type and p- type NWs display a characteristic red shift in their photoluminescence (PL) spectra. Surface plasmons observed in these systems imply high carrier concentrations. These corrosion resistant materials are useful in fabricating ultra-sensitive gas detectors and transparent electronics.
Keywords :
IV-VI semiconductors; antimony; carrier density; lithium; nanofabrication; nanowires; photoluminescence; red shift; semiconductor doping; semiconductor growth; surface plasmons; tin compounds; wide band gap semiconductors; SnO2:Li; SnO2:Sb; antimony insertion; bulk-scale synthetic methods; carrier concentrations; corrosion resistant materials; lithium insertion; n-doped tin oxide nanowire; n-doping; n-type nanowire; optical properties; p-doped tin oxide nanowire; p-doping; p-type nanowire; photoluminescence spectra; red shift; structural properties; surface plasmons; tin oxide lattice; tin oxide nanoparticles; transparent electronics; ultrasensitive gas detectors; Chemicals; Nanowires; Physics; Plasmons; Powders; Sensors; Tin; Tin Oxide Nanowires; doped nanowires; transparent oxides; wide band gap semiconductors;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4577-1514-3
Electronic_ISBN :
1944-9399
DOI :
10.1109/NANO.2011.6144603
