مرکز منطقه ای اطلاع رساني علوم و فناوري - Visible Semiconductor Laser Operation Below 640 Nm At Room Temperature

DocumentCode :

3230228

Title :

Visible Semiconductor Laser Operation Below 640 Nm At Room Temperature

Author :

Fletcher, R.M. ; Kuo, Q.R. ; Osentowski, T.D. ; Craford, M. George ; Nam, D.W. ; Dallasasse, J.M. ; Holonyak, Nick

Author_Institution :

Hewlett Packard Optoelectronics Division

fYear :

1988

fDate :

2-4 Nov. 1988

Firstpage :

360

Lastpage :

364

Keywords :

Diode lasers; Doping; Inductors; Lattices; Semiconductor lasers; Substrates; Temperature; Threshold current;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Lasers and Electro-Optics Society Annual Meeting, 1988. Conference Proceedings. LEOS '88.

Conference_Location :

Santa Clara, CA, USA

Type :

conf

DOI :

10.1109/LEOS.1988.689852

Filename :

689852

Link To Document :