Title :
Proceedings of 9th International Symposium on Power Semiconductor Devices and IC´s
Abstract :
The following topics were dealt with: lateral devices; smart power technology; device physics; smart power devices; bipolar devices; high voltage devices; high power IGBTs; high power turn-off; process technology
Keywords :
power integrated circuits; power semiconductor devices; semiconductor technology; bipolar devices; device physics; high power IGBTs; high power turn-off; high voltage devices; lateral devices; power ICs; power semiconductor devices; process technology; smart power devices; smart power technology;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar, Germany
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601421
