Title :
Characterization of low dose SIMOX for low power electronics
Author :
Anc, M.J. ; Allen, L.P. ; Dolan, R.P. ; Cordts, B.F. ; Ryding, G. ; Mendicino, M.A. ; Shi, Xiaoyu ; Maszara, W. ; Dockerty, R. ; Vasudev, P.K. ; Roitman, P.
Author_Institution :
Ibis Technol. Corp., Danvers, MA, USA
fDate :
30 Sep-3 Oct 1996
Abstract :
Summary form only given. In this work we focus on the characterization of the low dose SIMOX from the designed experiment. In this experiment the ⟨100⟩ oriented, p-type silicon wafers were implanted with the range of doses from 0.3E18 cm2 to 0.6E18 cm2 at the energy 190 keV, 200 keV and 210 keV and annealed for 6 hours at 1350°C in 1%O2 in N2. Nondestructive characterization was performed using spectroscopic ellipsometry, optical reflectometry and TXRF. The structure of thin film layers was analyzed with high resolution SEM, dislocation density was determined by the enhanced Secco etch, and buried oxide integrity was examined by the measurements of I/V and C/V characteristics with the mercury probe analyzer
Keywords :
SIMOX; ellipsometry; integrated circuit measurement; ion implantation; reflectometry; scanning electron microscopy; ⟨100⟩ oriented Si; 1350 C; 190 to 210 keV; 6 hour; C/V characteristics; I/V characteristics; N2; O2; O2-N2; Si; TXRF; buried oxide integrity; dislocation density; enhanced Secco etch; high resolution SEM; low dose SIMOX; low power electronics; mercury probe analyzer; nondestructive characterization; optical reflectometry; p-type Si wafers; spectroscopic ellipsometry; thin film layers; Annealing; Density measurement; Ellipsometry; Etching; Low power electronics; Optical films; Reflectometry; Silicon; Spectroscopy; Transistors;
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
Print_ISBN :
0-7803-3315-2
DOI :
10.1109/SOI.1996.552490
