60GHz unilateralized CMOS differential amplifier

Author

Bi, Xiaojun ; Guo, Yongxin ; Brinkhoff, James ; Leong, Mook-Seng ; Lin, Fujiang

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

fYear

2010

fDate

8-11 May 2010

Firstpage

204

Lastpage

207

Abstract

A novel unilateralization technique for a high frequency differential power amplifier is proposed to improve the gain and stability. To demonstrate the effectiveness, a differential 60-GHz power amplifier is designed based on the 90 nm CMOS technique. A transformer coupled differential architecture is used in this design. By using cross coupled capacitors to realize the four-port feedback network, the inherent parasitic effects are cancelled, and the differential power amplifier is neutralized. The two-stage amplifier has a gain of 10 dB, with a center frequency of 58.5 GHz and a bandwidth of 6.3 GHz. In the maximum gain state, the output 1dB compression point is +5.1 dBm, P_sat is +8.5 dBm and the peak PAE is 7.7 %, drawing 53 mA from a 1-V supply.

Keywords

CMOS integrated circuits; differential amplifiers; power amplifiers; bandwidth 6.3 GHz; center frequency; cross coupled capacitor; current 53 mA; four-port feedback network; frequency 58.5 GHz; frequency 60 GHz; gain 10 dB; high frequency differential power amplifier; inherent parasitic effect; transformer coupled differential architecture; unilateralization technique; unilateralized CMOS differential amplifier; voltage 1 V; Bandwidth; CMOS technology; Capacitors; Differential amplifiers; Feedback; Frequency; Gain; High power amplifiers; Power amplifiers; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5705-2

Type

conf

DOI

10.1109/ICMMT.2010.5524902

Filename

5524902