Title :
Pressure contact assembly technology of high power devices
Author :
Matsuda, Hideo ; Hiyoshi, Michiaki ; Kawamura, Noriyasu
Author_Institution :
Microelectron. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
The paper describes pressure contact technology applied to high power semiconductor devices. Specific application to multiple chip assembly, particularly IGBT chips, is dealt with, and improved reliability characteristics are demonstrated
Keywords :
assembling; insulated gate bipolar transistors; integrated circuit packaging; integrated circuit reliability; power integrated circuits; power semiconductor devices; semiconductor device packaging; semiconductor device reliability; IGBT chips; high power semiconductor devices; multiple chip assembly; pressure contact assembly technology; reliability characteristics; Anodes; Assembly; Bonding; Cathodes; Diodes; Insulated gate bipolar transistors; Plastics; Testing; Thyristors; Wire;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601422
