DocumentCode
3230711
Title
Pressure contact assembly technology of high power devices
Author
Matsuda, Hideo ; Hiyoshi, Michiaki ; Kawamura, Noriyasu
Author_Institution
Microelectron. Center, Toshiba Corp., Kawasaki, Japan
fYear
1997
fDate
26-29 May 1997
Firstpage
17
Lastpage
24
Abstract
The paper describes pressure contact technology applied to high power semiconductor devices. Specific application to multiple chip assembly, particularly IGBT chips, is dealt with, and improved reliability characteristics are demonstrated
Keywords
assembling; insulated gate bipolar transistors; integrated circuit packaging; integrated circuit reliability; power integrated circuits; power semiconductor devices; semiconductor device packaging; semiconductor device reliability; IGBT chips; high power semiconductor devices; multiple chip assembly; pressure contact assembly technology; reliability characteristics; Anodes; Assembly; Bonding; Cathodes; Diodes; Insulated gate bipolar transistors; Plastics; Testing; Thyristors; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location
Weimar
ISSN
1063-6854
Print_ISBN
0-7803-3993-2
Type
conf
DOI
10.1109/ISPSD.1997.601422
Filename
601422
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