Title :
Ka-band high gain low noise amplifier by Stacked-GCPW transmission line
Author :
Chen, Ting-Huei ; Chiu, Hsien-Chin
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
A high gain Ka-band CMOS Low-Noise-Amplifier is proposed in this paper. The CMOS LNA based on 4 stages common source structure. In each stage was connected by Stacked-Grounded-Coplanar-Waveguide transmission line structure in a 0.18-μm CMOS technology to reduce the loss from silicon substrate. The design of two stages noise matching increases the noise isolation between the gain matching stages and noise matching stages. The power gain of the LNA is higher than 20 dB from 30 GHz to 34 GHz with 4 GHz band width. The measured noise about 7 dB from 30 Ghz-34 GHz. The power consumption of the LNA is only 40 mW.
Keywords :
CMOS analogue integrated circuits; MIMIC; MMIC amplifiers; coplanar waveguides; low noise amplifiers; millimetre wave amplifiers; 4 stage common source structure; CMOS LNA; bandwidth 4 GHz; frequency 30 GHz to 34 GHz; gain matching stages; high gain Ka-band CMOS low-noise-amplifier; noise isolation; power 40 mW; silicon substrate; size 0.18 mum; stacked-GCPW transmission line; stacked-grounded-coplanar-waveguide transmission line structure; two stage noise matching design; Attenuation; CMOS technology; Coplanar waveguides; Distributed parameter circuits; Frequency; Low-noise amplifiers; Microstrip; Power transmission lines; Silicon; Transmission lines; GCPW; High-Gain; Low-Noise Amplifiers (LNAs); S-GCPW;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
DOI :
10.1109/ICMMT.2010.5524908
