DocumentCode :
3230819
Title :
Real time failure analysis of Cu interconnect defectivity through bitmap overlay analysis
Author :
Sheth, Vikas R. ; Nguyen, Hai ; Dao, Patrick ; Miscione, A. Mark
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
fYear :
1999
fDate :
1999
Firstpage :
8
Lastpage :
13
Abstract :
Bitmap to in-line defect overlay analysis was performed on a 4 Mbit SRAM memory array, which uses copper interconnect. This analysis provides an effective method of identifying killer copper defects, which inhibit product yield. It has been shown that bitmap overlay (BMOL) analysis is a very effective way of identifying killer defects for any technology at any process step. This can be proven to be a very powerful tool to relate physical defectivity to significant yield loss mechanisms. It has been shown that BMOL can be used to assign a root cause mechanism or a defect to an actual electrical fail without incurring tedious hours of destructive failure analysis. Failure analysis was, however, used to initially verify and confirm root cause of the electrical failures identified by BMOL analysis
Keywords :
SRAM chips; copper; failure analysis; integrated circuit metallisation; integrated circuit reliability; integrated circuit yield; 4 Mbit; BMOL; Cu; SRAM memory array; bitmap overlay analysis; in-line defect overlay analysis; interconnect defectivity; killer defects; product yield; real time failure analysis; Aluminum; Circuit testing; Copper; Electric resistance; Failure analysis; Inspection; Performance analysis; Random access memory; Research and development; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI
Conference_Location :
Boston, MA
ISSN :
1078-8743
Print_ISBN :
0-7803-5217-3
Type :
conf
DOI :
10.1109/ASMC.1999.798169
Filename :
798169
Link To Document :
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