Title :
Electrical properties of buried oxide layers of low dose SIMOX structures
Author :
Afanasev, V. ; Aspar, B. ; Auberton-hervé, A. ; Brown, G. ; Jenkins, W. ; Hughes, H. ; Revesz, A.
Author_Institution :
Dept. of Phys., Leuven Univ., Belgium
fDate :
30 Sep-3 Oct 1996
Abstract :
Summary form only given. The bulk and defect conduction as well as electron trapping properties of relatively thin (100 nn) buried oxide (BOX) layers of SIMOX structures have been studied with special emphasis on the effects of the capping oxide layer present during the post-implant high temperature annealing
Keywords :
SIMOX; buried layers; electrical conductivity; electron traps; 100 nm; BOX layers; Si; bulk conduction; buried oxide layers; capping oxide layer; defect conduction; electrical properties; electron trapping properties; low dose SIMOX structures; post-implant high temperature annealing; Annealing; Capacitive sensors; Electron traps; Ionization; Laboratories; Programmable logic arrays; Roentgenium; Strain control;
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
Print_ISBN :
0-7803-3315-2
DOI :
10.1109/SOI.1996.552491
