DocumentCode
3230831
Title
Proceedings. IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.89CH2790-4)
fYear
1989
fDate
7-9 Aug. 1989
Abstract
The following topics are dealt with: III-V field-effect transistors; bipolar transistors; measurements and characterization of quantum well, resonant tunneling, and related devices; and high-speed photonics
Keywords
bipolar transistors; field effect transistors; monolithic integrated circuits; semiconductor device testing; semiconductor quantum wells; semiconductor technology; tunnel diodes; III-V field-effect transistors; bipolar transistors; high speed semiconductor circuits; high speed semiconductor devices; high-speed photonics; quantum well devices; resonant tunnelling devices; semiconductor device characterisation;
fLanguage
English
Publisher
ieee
Conference_Titel
High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location
Ithaca, NY, USA
Type
conf
DOI
10.1109/CORNEL.1989.79817
Filename
79817
Link To Document