Title :
A temperature-stabilized voltage reference utilizing MOS body effect
Author :
Sul, Haesick ; Jun, Young-Hyun ; Kong, Bai-Sun
Author_Institution :
Sch. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon, South Korea
Abstract :
A low-voltage low-power CMOS voltage reference has been proposed in this paper, in which body effect is exploited to provide a temperature-stabilized voltage. The proposed voltage reference was designed in a 0.13-μm standard CMOS process. Comparison results showed that the proposed voltage reference well operated with a supply voltage of as low as 0.7 V, whose operating current was 2.28 μA at room temperature. The temperature coefficient of the proposed voltage reference was as low as 3.4 ppm/°C for a temperature range from -20 °C to 80 °C.
Keywords :
CMOS integrated circuits; low-power electronics; MOS body effect; body effect; current 2.28 muA; low-power CMOS voltage reference; low-voltage CMOS voltage reference; size 0.13 mum; temperature -20 degC to 80 degC; temperature coefficient; temperature-stabilized voltage; temperature-stabilized voltage reference; voltage 0.7 V; Gold; Very large scale integration; CMOS analog circuit; body effect; low voltage; voltage reference;
Conference_Titel :
Circuits and Systems (APCCAS), 2010 IEEE Asia Pacific Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-7454-7
DOI :
10.1109/APCCAS.2010.5774965
