High CW output power InGaAs/InGaAsP/InGaP diode lasers: effect of substrate misorientation

Author

Mawst, L.J. ; Bhattacharya, A. ; Nesnidal, M. ; Lopez, J. ; Botez, D. ; Morris, J.A. ; Zory, P.

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

Volume

2

fYear

1995

fDate

30 Oct-2 Nov 1995

Firstpage

408

Abstract

Summary form only given. 3 W CW output power is obtained from InGaAs-InGaAsP-InGaP uncoated, 100-μm-wide-stripe, quantum well diode lasers grown by low-pressure MOCVD on exact (100) GaAs substrates. Lasers grown on misoriented substrates exhibit increased temperature sensitivity of threshold and differential quantum efficiency

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical fabrication; quantum well lasers; semiconductor growth; sensitivity; substrates; vapour phase epitaxial growth; 100 mum; 3 W; CW output power; GaAs; GaAs substrates; InGaAs-InGaAsP-InGaP; InGaAs-InGaAsP-InGaP uncoated quantum well diode lasers; InGaAs/InGaAsP/InGaP diode lasers; differential quantum efficiency; high CW output power; laser threshold; low-pressure MOCVD; misoriented substrates; substrate misorientation; temperature sensitivity; Diode lasers; Fiber lasers; Gallium arsenide; Indium gallium arsenide; MOCVD; Optical materials; Power generation; Pump lasers; Quantum well lasers; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484775

Filename

484775