Title :
Selectively oxidized vertical-cavity lasers
Author :
Choquette, Kent D. ; Lear, K.L. ; Schneider, R.P., Jr. ; Geib, K.M. ; Chui, H.C.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
30 Oct-2 Nov 1995
Abstract :
Summary form only given. During 1995 there has been rapid advance in the performance of vertical-cavity surface emitting lasers (VCSELs) fabricated using the conversion of AlGaAs into a stable oxide. VCSELs with Al-oxide current apertures have exhibited the highest wall plug efficiency and lowest threshold current reported to date for VCSELs. We discuss the fabrication and performance of IR and visible VCSELs employing buried oxide layers within monolithic distributed Bragg reflectors for efficient electrical and optical confinement
Keywords :
laser cavity resonators; optical fabrication; oxidation; semiconductor lasers; surface emitting lasers; Al-oxide current apertures; Al2O3; AlGaAs; buried oxide layers; highest wall plug efficiency; lowest threshold current; monolithic distributed Bragg reflectors; optical confinement; selectively oxidized vertical-cavity lasers; stable oxide; vertical-cavity surface emitting lasers; visible VCSELs; Carrier confinement; Distributed Bragg reflectors; Electrons; Optical device fabrication; Oxidation; Plugs; Stimulated emission; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484777
