Title :
Reduced threshold bottom emitting vertical cavity lasers by AlAs oxidation
Author :
Floyd, P.D. ; Thibeault, B.J. ; Coldren, L.A. ; Merz, J.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
30 Oct-2 Nov 1995
Abstract :
Summary form only given. In summary, very low threshold current etched-pillar InGaAs DBR QW VCSELs have been fabricated using AlAs-oxidation. Monotonically decreasing threshold currents were observed for down to very small area devices, indicating suppression of diameter dependent, optical scattering loss caused by etched-pillar sidewalls
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; etching; gallium arsenide; indium compounds; laser cavity resonators; light scattering; optical fabrication; optical losses; oxidation; quantum well lasers; surface emitting lasers; AlAs; AlAs oxidation; InGaAs; diameter dependent; etched-pillar InGaAs DBR QW VCSELs; etched-pillar sidewalls; monotonically decreasing threshold currents; optical scattering loss; quantum well laser fabrication; small area devices; threshold bottom emitting vertical cavity lasers; very low threshold current; Distributed Bragg reflectors; Electrons; Etching; Gallium arsenide; Optical fiber communication; Optical losses; Oxidation; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484778
