DocumentCode :
3231133
Title :
Bipolar resistive switching of zinc-tin-oxide resistive random access memory
Author :
Murali, Santosh ; Rajachidambaram, Jaana Saranya ; Han, Seung-Yeol ; Chang, Chih-Hung ; Herman, Gregory S. ; Conley, John F., Jr.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR, USA
fYear :
2011
fDate :
15-18 Aug. 2011
Firstpage :
740
Lastpage :
743
Abstract :
Bipolar switching is reported for the first time using solution deposited amorphous zinc-tin-oxide (ZTO). The impact of compliance current (CC) on the SET voltage, the magnitude of the low and high resistance states, and the switching ratio is investigated for Al/ZTO/Ir resistive random access memory (RRAM) devices.
Keywords :
aluminium; amorphous semiconductors; bipolar memory circuits; iridium; random-access storage; resistors; semiconductor switches; zinc compounds; Al-Zn2SnO4-Ir; bipolar resistive switching; compliance current; resistive random access memory; solution deposited amorphous zinc tin oxide; Films; Metals; Physics; Resistance; Switches; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location :
Portland, OR
ISSN :
1944-9399
Print_ISBN :
978-1-4577-1514-3
Electronic_ISBN :
1944-9399
Type :
conf
DOI :
10.1109/NANO.2011.6144646
Filename :
6144646
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3231133
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