Title :
The overlooked real cause for high voltage in vertical-cavity surface-emitting lasers
Author :
Li, G.S. ; Li, M.Y. ; Yuen, W. ; Chang-Hasnain, C.J.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
fDate :
30 Oct-2 Nov 1995
Abstract :
Summary form only given. In this work, we have designed an experiment to show that with proper p+GaAs-Au contact annealing, device threshold voltage (Vth) is reduced greatly to 1.46 V with merely a simple, uniformly doped InGaAs QW vertical cavity surface emitting (VCSEL) laser structure. Thus, contrary to previous publications, doping and bandgap engineering at heterointerfaces appear not to be very significant. Our results also show that contrary to general belief, Ti-Au or Au on p+GaAs cap layer can be annealed to obtain better contacts
Keywords :
III-V semiconductors; annealing; electrical contacts; gallium arsenide; indium compounds; laser cavity resonators; quantum well lasers; surface emitting lasers; 1.46 V; GaAs; GaAs-Au; InGaAs; Ti-Au; VCSEL laser structure; annealed; bandgap engineering; contacts; device threshold voltage; heterointerfaces; high voltage; p+GaAs cap layer; p+GaAs-Au contact annealing; uniformly doped InGaAs QW laser; vertical cavity surface emitting laser structure; vertical-cavity surface-emitting lasers; Annealing; Doping; Gallium arsenide; Gold; Indium gallium arsenide; Optical design; Photonic band gap; Surface emitting lasers; Threshold voltage; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484780
