The overlooked real cause for high voltage in vertical-cavity surface-emitting lasers

Author

Li, G.S. ; Li, M.Y. ; Yuen, W. ; Chang-Hasnain, C.J.

Author_Institution

Edward L. Ginzton Lab., Stanford Univ., CA, USA

Volume

2

fYear

1995

fDate

30 Oct-2 Nov 1995

Firstpage

418

Abstract

Summary form only given. In this work, we have designed an experiment to show that with proper p⁺GaAs-Au contact annealing, device threshold voltage (Vth) is reduced greatly to 1.46 V with merely a simple, uniformly doped InGaAs QW vertical cavity surface emitting (VCSEL) laser structure. Thus, contrary to previous publications, doping and bandgap engineering at heterointerfaces appear not to be very significant. Our results also show that contrary to general belief, Ti-Au or Au on p⁺GaAs cap layer can be annealed to obtain better contacts

Keywords

III-V semiconductors; annealing; electrical contacts; gallium arsenide; indium compounds; laser cavity resonators; quantum well lasers; surface emitting lasers; 1.46 V; GaAs; GaAs-Au; InGaAs; Ti-Au; VCSEL laser structure; annealed; bandgap engineering; contacts; device threshold voltage; heterointerfaces; high voltage; p⁺GaAs cap layer; p⁺GaAs-Au contact annealing; uniformly doped InGaAs QW laser; vertical cavity surface emitting laser structure; vertical-cavity surface-emitting lasers; Annealing; Doping; Gallium arsenide; Gold; Indium gallium arsenide; Optical design; Photonic band gap; Surface emitting lasers; Threshold voltage; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484780

Filename

484780