DocumentCode
3231154
Title
Long wavelength VCSELs using wafer-fused GaAs/AlAs Bragg mirror and strain-compensated quantum wells
Author
Chua, C.L. ; Zhu, Z.H. ; Lo, Y.H. ; Hong, M. ; Bhat, R.
Author_Institution
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Volume
2
fYear
1995
fDate
30 Oct-2 Nov 1995
Firstpage
420
Abstract
We have employed two innovative technologies, strain-compensated multiple quantum wells and material bonding, to demonstrate low threshold and dynamic single mode 1.5 μm vertical cavity surface emitting (VCSEL) lasers
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; infrared sources; laser cavity resonators; laser mirrors; laser modes; quantum well lasers; surface emitting lasers; 1.5 μm vertical cavity surface emitting lasers; 1.5 mum; GaAs-AlAs; GaAs/AlAs Bragg mirror; dynamic single mode; innovative technologies; long wavelength VCSELs; low threshold; material bonding; strain-compensated multiple quantum wells; strain-compensated quantum wells; wafer-fused; Distributed Bragg reflectors; Gallium arsenide; Laser modes; Mirrors; Optical films; Optical pumping; Temperature; Threshold current; Vertical cavity surface emitting lasers; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2450-1
Type
conf
DOI
10.1109/LEOS.1995.484781
Filename
484781
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