DocumentCode
3231172
Title
Efficient AlGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) optimized for cryogenic operation at 6 K to 150 K
Author
Schneider, R.P. ; Zolper, J.C.
Volume
2
fYear
1995
fDate
30 Oct-2 Nov 1995
Firstpage
423
Abstract
We have demonstrated AlGaAs/GaAs VCSELs optimized for operation in the cryogenic region from 150K to 10K, with superior DC lasing characteristics including a high output power, low and nearly constant threshold current, low operating voltage, a slope efficiency of ~100%, and a 11GHz modulation bandwidth that is limited by parasitics
Keywords
III-V semiconductors; aluminium compounds; cryogenic electronics; gallium arsenide; semiconductor lasers; surface emitting lasers; 11 GHz; 6 to 150 K; AlGaAs-GaAs; DC lasing; cryogenic operation; modulation bandwidth; operating voltage; output power; parasitics; slope efficiency; threshold current; vertical-cavity surface-emitting lasers; Bandwidth; Cryogenics; Gallium arsenide; Mirrors; Power generation; Surface emitting lasers; Temperature dependence; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2450-1
Type
conf
DOI
10.1109/LEOS.1995.484782
Filename
484782
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