Multi-channel SOI lateral IGBTs with large SOA

Author

Funaki, Hideyuki ; Matsudai, Tomoko ; Nakagawa, Akio ; Yasuhara, Norio ; Yamaguchi, Yoshihiro

Author_Institution

Mater. & Devices Res. Labs., Toshiba Corp., Kawasaki, Japan

fYear

1997

fDate

26-29 May 1997

Firstpage

33

Lastpage

36

Abstract

We report, for the first time, the development of 5 ampere multi-channel lateral IGBTs on SOI. The new LIGBTs are characterized by a plural number of parallel stripe poly-silicon gates and resultant plural number of channels, which enhances electron injection and attains a large current capability. The developed LIGBTs conduct current density over 120 A/cm² at the drain voltage of 3 V and simultaneously achieve a fall-time below 300 ns. The LIGBTs have excellent current capability and short circuit withstanding capability of DC 300 V with 500 A/cm² of drain current even at 200°C

Keywords

current density; insulated gate bipolar transistors; semiconductor device reliability; silicon-on-insulator; 200 C; 3 V; 300 V; 300 ns; 5 A; Si-SiO₂; current density; drain current; drain voltage; electron injection enhancement; fall-time; large SOA; large current capability; multi-channel SOI lateral IGBTs; parallel stripe poly-silicon gates; safe operating area; short circuit withstanding capability; Anodes; CMOS process; Current density; Electrons; Insulated gate bipolar transistors; Laboratories; Low voltage; Power integrated circuits; Semiconductor optical amplifiers; Switching loss;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Conference_Location

Weimar

ISSN

1063-6854

Print_ISBN

0-7803-3993-2

Type

conf

DOI

10.1109/ISPSD.1997.601424

Filename

601424