Title :
Multi-channel SOI lateral IGBTs with large SOA
Author :
Funaki, Hideyuki ; Matsudai, Tomoko ; Nakagawa, Akio ; Yasuhara, Norio ; Yamaguchi, Yoshihiro
Author_Institution :
Mater. & Devices Res. Labs., Toshiba Corp., Kawasaki, Japan
Abstract :
We report, for the first time, the development of 5 ampere multi-channel lateral IGBTs on SOI. The new LIGBTs are characterized by a plural number of parallel stripe poly-silicon gates and resultant plural number of channels, which enhances electron injection and attains a large current capability. The developed LIGBTs conduct current density over 120 A/cm2 at the drain voltage of 3 V and simultaneously achieve a fall-time below 300 ns. The LIGBTs have excellent current capability and short circuit withstanding capability of DC 300 V with 500 A/cm2 of drain current even at 200°C
Keywords :
current density; insulated gate bipolar transistors; semiconductor device reliability; silicon-on-insulator; 200 C; 3 V; 300 V; 300 ns; 5 A; Si-SiO2; current density; drain current; drain voltage; electron injection enhancement; fall-time; large SOA; large current capability; multi-channel SOI lateral IGBTs; parallel stripe poly-silicon gates; safe operating area; short circuit withstanding capability; Anodes; CMOS process; Current density; Electrons; Insulated gate bipolar transistors; Laboratories; Low voltage; Power integrated circuits; Semiconductor optical amplifiers; Switching loss;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601424
