DocumentCode :
323128
Title :
A New Determination Method for Aigaas/gaas Hbt Large-Signal Model Parameters Using Bias Dependent Noise Parameters and S-Parameters
Author :
Hayama, N. ; Shimizu, J. ; Honjo, K.
Author_Institution :
Microelectronics Research Laboratories, NEC Corporation, Japan
Volume :
1
fYear :
1992
fDate :
11-13 Aug. 1992
Firstpage :
539
Lastpage :
542
Keywords :
Circuit noise; Computer aided analysis; Equivalent circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Microwave transistors; Noise figure; Noise measurement; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1992. APMC 92. 1992 Asia-Pacific
Conference_Location :
Adelaide, South Australia
Print_ISBN :
0-7803-0549-3
Type :
conf
DOI :
10.1109/APMC.1992.672098
Filename :
672098
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=323128
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