High density, high power arrays of vertical cavity surface emitting lasers operating at 850 nm

We report on the performance of 4 element 850 nm top surface emitting linear VCSEL arrays with spacing of 30 μm. These devices have been fabricated by a fully planar process combining an implanted aperture structure with a field isolation implant to achieve electrical isolation between emitters. Implant apertures are 15 μm in diameter, with 11 μm metal openings. The epitaxial layer structure within which this structure was grown is similar to that reported recently to have achieved outstanding efficiencies in implanted device structures at 850 nm