Title :
A High Linearity 6th-order active R-MOSFET-C band-pass filter for power-line communication
Author :
Zhu, Di ; Wang, Jiacheng ; Zhong, Chaoli ; Tian, Jie ; Tang, Yiming ; Wan, Peiyuan ; Lin, Ping
Author_Institution :
Beijing Embedded Syst. Key Lab., Beijing Univ. of Technol., Beijing, China
Abstract :
A linearity improvement technique is proposed on the design of low frequency (132 KHz center frequency, 40 KHz band frequency) power-line communication band-pass filter, which focus on the linearity of large R-MOSFET. In order to enhance the linearity of the triode-mode MOSFET variable resistors, driving the controlling voltages of the R-MOSFET in a resistor tuning schematic instead of the main signal schematic is chosen. Further more, appropriate control bits are added to adjust the center frequency of the band-pass filter. Fabricated in SMIC0.18μm CMOS technology, this 6th-order Chebvshev I filter achieves 5K Hz band frequency deviation and 43dB in-band IIP3, and dissipates 4.86mW from a 1.8-V supply; the on-chip continuous automatic tuning block (MASTER) dissipates 2.05mW at the supply of 3.3V.
Keywords :
CMOS integrated circuits; MOSFET; band-pass filters; carrier transmission on power lines; circuit tuning; resistors; 6th-order Chebvshev filter; SMIC CMOS technology; high linearity 6th-order active R-MOSFET-C band-pass filter; linearity improvement; on-chip continuous automatic tuning block; power 2.05 mW; power 4.86 mW; power-line communication; resistor tuning; signal schematic; size 0.18 mum; triode-mode MOSFET variable resistor; voltage 1.8 V; voltage 3.3 V; Band pass filters; Capacitors; Linearity; MOSFET circuits; Resistors; Testing; Voltage control; Continuous-time filter; R-MOSFET-C; high linearity; masterslave tuning;
Conference_Titel :
Circuits and Systems (APCCAS), 2010 IEEE Asia Pacific Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-7454-7
DOI :
10.1109/APCCAS.2010.5774994
