Title :
Bidirectional LIGBT on SOI substrate with high frequency and high temperature capability
Author :
Xu, Shuming ; Plikat, Robert ; Constapel, Rainer ; Korec, Jacek ; Silber, Dieter
Author_Institution :
Res. Center, Daimler-Benz AG, Frankfurt, Germany
Abstract :
This paper presents a bidirectional lateral IGBT on SOI for IC integration exhibiting symmetrical output performance suitable for high frequency applications. The device structure is obtained by reflecting a typical DMOS on the anode side, thus introducing a gate controlled anode short. The short avoids the typical trade-off problem of conduction-loss versus blocking capability at high temperatures. Turn-off speed is improved by a factor of 3, while the maximum controllable current is about 50% higher at 125°C
Keywords :
high-temperature techniques; insulated gate bipolar transistors; silicon-on-insulator; 125 C; IC integration; SOI substrate; bidirectional lateral IGBT; blocking capability; conduction-loss; gate controlled anode short; high frequency applications; high temperature capability; maximum controllable current; symmetrical output performance; turn-off speed; Anodes; Application specific integrated circuits; Cathodes; Frequency; High speed integrated circuits; Insulated gate bipolar transistors; Matrix converters; Power electronics; Switches; Temperature;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601425
