SOI-MOSFET parameters for variable channel lengths in the high temperature range (300-600 K)

Summary form only given. Preliminary work has demonstrated that the temperature range of silicon components may be substantially extended by using SOI devices. However, the variation of the different device parameters in the high temperature range is not yet fully clarified, especially for small devices. We have already discussed the variation of the surface mobility with temperature and back gate bias. In this paper, we investigate the behaviour of the threshold voltage and leakage current, major parameters for reliable circuit operation, as a function of channel length and temperature. The fully depleted n- and p-channel SOI-MOSFETs were fabricated with standard CMOS technology on commercially available SIMOX substrates