Empirical model for dielectric charging in double-SOI-wafer-bonded CMUTs: Theory and experiment

Author

Zheng, Wei ; Barlage, Douglas ; Zhang, Peiyu ; Fitzpatrick, Glen ; Moussa, Walied ; Zemp, Roger

Author_Institution

Electr. & Comput. Eng., Univ. of Alberta, Edmonton, AB, Canada

fYear

2011

fDate

18-21 Oct. 2011

Firstpage

353

Lastpage

356

Abstract

We performed charging experiments with double SOI wafer bonded CMUTs by capacitance measurement methods over short term and long term charging periods. An empirical model has been built, which quantitatively characterizes the surface and volume charging effects by using different charging time constants and distribution factors. This model agrees well with the experiment data and has better accuracy compared to other models. Discharge events have been observed, which alter the charging rate.

Keywords

capacitive sensors; dielectric properties; micromechanical devices; silicon-on-insulator; transducers; wafer bonding; capacitance measurement; capacitive micromachined ultrasound transducers; charging time constants; dielectric charging; distribution factors; double-SOI-wafer-bonded CMUT; Data models; Dielectrics; Mathematical model; Rough surfaces; Solid modeling; Surface charging; Surface roughness; cMUT; capacitive measurement; dielectric charging; modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium (IUS), 2011 IEEE International

Conference_Location

Orlando, FL

ISSN

1948-5719

Print_ISBN

978-1-4577-1253-1

Type

conf

DOI

10.1109/ULTSYM.2011.0084

Filename

6293488