• DocumentCode
    323147
  • Title

    Time memory cell VLSI for the PHENIX drift chamber

  • Author

    Arai, Y. ; Ikeno, M. ; Sagara, M. ; Emura, T.

  • Author_Institution
    Nat. High Energy Accel. Res. Organ., KEK, Ibaraki, Japan
  • fYear
    1997
  • fDate
    9-15 Nov 1997
  • Firstpage
    8
  • Abstract
    A high-precision Time-to-Digital-Converter VLSI, TMC-PHX1, was developed for the PHENIX drift chamber. The chip contains 4 channels of TDC with two stages of data buffering and a trigger buffering which are necessary for very high rate experiments. In addition to the fixed data size readout, the chip also supports zero-suppression mode readout. The chip records both rising and falling edge timings, and has a least timing count of 0.83 ns/bit and 1.66 ns/bit respectively. A level 1 buffer has a recording depth of 6.8 μsec and a readout FIFO has a depth of 128 words. High precision timing was derived from an asymmetric ring oscillator stabilized with a PLL. The chip runs at 4 times faster clock (37.6 MHz) of the RHIC bunch clock, and was fabricated with 0.5 μm CMOS gate-array technology
  • Keywords
    VLSI; drift chambers; nuclear electronics; CMOS gate-array technology; FIFO; PHENIX drift chamber; RHIC bunch clock; TMC-PHX1; asymmetric ring oscillator; data buffering; high-precision time-to-digital-converter; time memory cell VLSI; trigger buffering; zero-suppression mode readout; CMOS memory circuits; CMOS technology; Clocks; Computer buffers; Delay; Electronics packaging; Frequency; Phase locked loops; Timing; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium, 1997. IEEE
  • Conference_Location
    Albuquerque, NM
  • ISSN
    1082-3654
  • Print_ISBN
    0-7803-4258-5
  • Type

    conf

  • DOI
    10.1109/NSSMIC.1997.672486
  • Filename
    672486